A Simple Hole Scattering Length Model for the Solution of Charge Transport in Bipolar Transistors
نویسنده
چکیده
Considering the small warping parabolic heavy hole model with the quasi-elastic approximation in acoustic phonon scattering, it is shown that the hole scattering length is independent of the hole energy. This result now makes it possible to solve the Boltzmann transport equation to obtain a simple analytical solution for the ballistic hole transport in a thin and uniformly doped base of a pnp transistor.
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